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| inchange semiconductor product specification silicon npn power transistors 2SD525 description ? ? with to-220c package ? complement to type 2sb595 ? high breakdown voltage :v ceo =100v ?low collector saturation volage : v ce(sat) =2.0v(max) applications ? power amplifier applications ? recommend for 30w high fidelity audio frequency amplifier output stage pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a i e emitter current -5 a p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD525 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma; i b =0 100 v v (br)ebo emitter-base breakdown votage i e =10ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =4a;i b =0.4 a 2.0 v v be base-emitter voltage i c =1a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =100v; i e =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 1 ma h fe-1 dc current gain i c =1a ; v ce =5v 40 240 h fe-2 dc current gain i c =4a ; v ce =5v 20 f t transition frequency i c =1a ; v ce =5v 12 mhz c ob output capacitance i e =0; v cb =10v;f=1mhz 100 pf ? h fe-1 classifications r o y 40-80 70-140 120-240 inchange semiconductor product specification 3 silicon npn power transistors 2SD525 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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